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Crystal growth method |
CZ |
Article |
P |
Doping |
Boron |
Resistivity |
0.5-3ohm*cm;3-6ohm*cm |
Oxygen content |
at<1*1018/cm3 |
Carbon content |
at<5<1016/cm3 |
| Minority carrier lifetime |
≥10μs |
| Potential difference density |
<3000/cm2 |
Perpendicularity of silicon chips' adjacent edges |
90±0.3° |
| Crystal orientation |
100±3° |
| Dimension |
156±0.5mm |
| Diameter |
200±0.5mm |
| Thickness |
180±20μm |
| TTV |
<30μm |
| Flexibility |
<50μm |
| Saw cut |
≤15μm |
| Crystal defect |
≤2 Each wafer, depth≤0.3mm,length≤0.5mm |
| Appearance |
clean, hole-free, crack-free |
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