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Crystal growth method

CZ

Article

P

Doping

Boron

Resistivity

0.5-3ohm*cm;3-6ohm*cm

Oxygen content

at<1*1018/cm3

Carbon content

at<5<1016/cm3

Minority carrier lifetime ≥10μs
Potential difference density <3000/cm2

Perpendicularity of silicon chips' adjacent edges

90±0.3°

Crystal orientation 100±3°
Dimension 156±0.5mm
Diameter 200±0.5mm
Thickness 180±20μm
TTV <30μm
Flexibility <50μm
Saw cut ≤15μm
Crystal defect ≤2 Each wafer, depth≤0.3mm,length≤0.5mm
Appearance clean, hole-free, crack-free