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Crystal growth method |
CZ |
Crystal orientation |
<100> |
Resistivity (Ω*cm) |
1.0 - 3.0,3.0 - 6.0 |
Resistivity uniformity |
<15% |
Oxygen content (atoms/cm3) |
≤1.0×10 |
Carbon content(atoms/cm3 |
≤5×10 |
| Minority carrier lifetime (μs) |
≥10 |
| Diameter of silicon rod (mm) |
205±2 |
Constant diameter length (mm) |
≤2000 |
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